IRFP4568PBF

Specifications

Width: 5.31 mm

Height: 20.7 mm

Length: 15.87 mm

Technology: Si

Unit Weight: 6 g

Channel Mode: Enhancement

Configuration: Single

Mounting Style: Through Hole

Transistor Type: 1 N-Channel

Qg - Gate Charge: 151 nC

Number of Channels: 1 Channel

Transistor Polarity: N-Channel

Pd - Power Dissipation: 517 W

Vgs - Gate-Source Voltage: - 30 V, + 30 V

Id - Continuous Drain Current: 171 A

Maximum Operating Temperature: + 175 C

Minimum Operating Temperature: - 55 C

Rds On - Drain-Source Resistance: 4.8 mOhms

Vds - Drain-Source Breakdown Voltage: 150 V

Vgs th - Gate-Source Threshold Voltage: 1.8 V