SIHG47N60EF-GE3

Specifications

Width: 5.31 mm
Height: 20.82 mm
Length: 15.87 mm
Technology: Si
Unit Weight: 6 g
Channel Mode: Enhancement
REACH - SVHC: Details
Configuration: Single
Mounting Style: Through Hole
Qg - Gate Charge: 228 nC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 379 W
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Id - Continuous Drain Current: 47 A
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 65 mOhms
Vds - Drain-Source Breakdown Voltage: 600 V
Vgs th - Gate-Source Threshold Voltage: 2 V