BSN20BKR

Specifications

Fall Time: 5.1 ns
Rise Time: 8.4 ns
Technology: Si
Unit Weight: 8 mg
Channel Mode: Enhancement
Configuration: Single
Mounting Style: SMD/SMT
Transistor Type: 1 N-Channel Trench MOSFET
Qg - Gate Charge: 490 pC
Number of Channels: 1 Channel
Transistor Polarity: N-Channel
Pd - Power Dissipation: 402 mW
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Typical Turn-On Delay Time: 7.9 ns
Typical Turn-Off Delay Time: 12.5 ns
Id - Continuous Drain Current: 265 mA
Maximum Operating Temperature: + 150 C
Minimum Operating Temperature: - 55 C
Rds On - Drain-Source Resistance: 2.8 Ohms
Vds - Drain-Source Breakdown Voltage: 60 V
Vgs th - Gate-Source Threshold Voltage: 600 mV